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«SANDIA REPORT SAND2016-0109 Printed January 2016 Electrical Breakdown Physics in Photoconductive Semiconductor Switches (PCSS) Alan Mar, Fred ...»

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[15] C. D. Capps, R. A. Falk, and J. C. Adams, “Time dependent model of an optically triggered GaAs switch,” J. Appl. Phys., vol. 74, pp. 6645—6654, 1993.

[16] H. P. Hjalmarson, F. J. Zutavern, G. M. Loubriel, M. T. Buttram, A. G. Baca, and L. A. Romero, “A thermal ionization model for the sustaining phase of lock-on in GaAs,” Proc. SPIE, vol. 1873, pp.

117—125, 1993.

[17] P. J. Stout and M. J. Kushner, “Modeling of high power semiconductor switches operated in the nonlinear mode,” J. Appl. Phys., vol. 79, pp. 2084—2090, 1996.

[18] N. E. Islam, E. Schamiloglu, and C. B. Fleddermann, “Characterization of semi-insulating GaAs photoconductive semiconductor switch for ultrawide band high power microwave applications,” Appl. Phys. Lett., vol. 73, pp. 1988—1990, 1998.

[19] E. Schamiloglu, N. E. Islam, C. B. Fleddermann, B. Shipley, R. P. Joshi, and L. Zheng, “Simulation, modeling, and experimental studies of high-gain gallium arsenide photoconductive switches for ultra-wideband applications,” unpublished, 1999.

[20] W. Fawcett, A. D. Boardman, and S. Swain, “Monte Carlo determination of electron transport properties in gallium arsenide,” J. Phys. Chem. Sol., vol. 31, p. 196, 1970.

[21] T. Pearsall, F. Capasso, R. E. Nahory, M. A. Pollack, and J. R. Chelikowsky, “The band structure dependence of impact ionization by hot carriers in semiconductors: GaAs,” Sol. State Elec., vol. 21, pp. 297—302, 1978.

[22] R. A. Falk, F. J. Zutavern, and M. W. O’Malley, “Carrier density and thermal images of transient filaments in GaAs photoconductive switches,” in On Diagnostic Techniques for Semiconductor Materials and Devices, 1997.

[23] D. W. Bailey, R. A. Dougal, and J. L. Hudgins, “A streamer model for high gain photoconductive switching,” Proc. SPIE, vol. 1873, pp. 185—191, 1993.

[24] J. L. Hudgins, D. W. Bailey, R. A. Dougal, and V. Venkatesan, “Streamer model for ionization growth in a photoconductive power switch,” vol. 10, pp. 615—620, 1995.

[25] L. Partain, D. Day, and R. Powell, “Metastable impact ionization of traps model for lock-on in GaAs photoconductive switches,” J. Appl. Phys., vol. 74, p. 335, 1993.

[26] W.T.WhiteIII,C.G.Dease,M.D.Pocha,andG.H.Khanaka,“ModelingGaAshigh-voltage, subnanosecond photoconductive switches in one spatial dimension,” IEEE Trans. Elect. Dev., vol. 37, p. 2532, 1990.

[27] M. A. Gundersen, J. H. Hur, H. Zhao, and C. W. Myles, “Lock-on effect in pulsed power semiconductor switches,” J. Appl. Phys., vol. 71, pp. 3036—3038, 1992.

[28] W. Shi, E.-Z. Chen, X.-B. Zhang, and Q. Li, “Monopole charge domain in high-gain gallium arsenide photoconductive switches,” Chinese Phys. Lett., vol. 19, p. 1119, 2002.

[29] S. Wei, Z. Wei, L. Shen-Xian, and S. Xiao-Wei, “Time-dependent analysis of high-gain triggering in semi-insulating GaAs photoconductive switches,” Chinese Physics Letters, vol. 18, pp. 1479— 1480, 2001.

[30] H. Zhao, P. Hadizad, J. H. Hur, and M. A. Gundersen, “Avalanche injection model for the lock-on effect in III-V power photoconductive switches,” J. Appl. Phys., p. 1807.

[31] K. E. Kambour, A Theory of Lock-On and Electrical Breakdown. PhD thesis, 2003. Unpublished.

[32] K. E. Kambour, H. P. Hjalmarson, and C. W. Myles, “Theory of optically-triggered electrical breakdown of semiconductors,” in IEEE Annual Report-Conference on Electrical Insulation and Dielectric Phenomena, 2003.

[33] K. Kambour, H. P. Hjalmarson, and C. W. Myles, “A collective theory of lock-on in photoconductive semiconductor switches,” in Digest of Technical Papers 14th IEEE International Pulsed Power Conference, vol. 1, 2003.

[34] K. Kambour, H. P. Hjalmarson, F. J. Zutavern, A. Mar, and C. W. Myles, “Simulation of electric current in photoconductive semiconductor switches,” in PPC Proc., 2005.

[35] K. Kambour, H. P. Hjalmarson, and C. W. Myles, “A theory of low-field, high-carrier-density breakdown in semiconductors,” in 27th International Conference on the Physics of Semiconductors, 2004.

[36] K. Kambour, H. P. Hjalmarson, and C. W. Myles, “Theory of electrical breakdown in solid insulators,”

2015. Unpublished manuscript.

[37] K. Kambour, H. P. Hjalmarson, and C. W. Myles, “Theory of low field electrical breakdown in photoconductive semiconductor switch materials,” 2015. Unpublished manuscript.

[38] M. L. Cohen and T. K. Bergstresser, “Band structures and pseudopotential form factors for fourteen semiconductors,” Phys. Rev., vol. 141, p. 78, 1966.

[39] F. Llewellyn-Jones, Ionisation and Breakdown in Gases. New York, NY: John Wiley and Sons, Inc., 1957.

[40] C. R. Crowell and S. M. Sze, “Temperature dependence of avalanche multiplication in semiconductors,” Appl. Phys. Lett., vol. 9, p. 242, 1966.

Distribution 1 MS 1085 C. T. Sullivan 01742 1 MS 1153 J. A. Alexander 05443 1 MS 1167 E. F. Hartman 01343 1 MS 1179 L. Lorence 01341 1 MS 1168 S. D. Wix 01356 1 MS 1168 B. S. Paskaleva 01356 1 MS 1173 J. A. Alexander 05443 1 MS 1173 A. Mar 05443

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